smd type ic www.kexin.com.cn 1 smd type transistors so t -363 unit: mm 1.3 +0.1 -0.1 0.65 0.525 1.25 +0.1 -0.1 0.36 0.1 +0.05 -0.02 0.1max 0.95 +0.05 -0.05 2.3 +0.15 -0.15 0.3 +0.1 -0.1 2.1 +0.1 -0.1 complementary 20-v (d-s) low-threshold mosfet KI1501DL absolute maximum ratings ta = 25 parameter symbol n-channel p-channel unit drain-source voltage v ds 20 -20 v gate-source voltage v gs 8 8 v continuous drain current (t j = 150 )* t a =25 250 -180 ma t a =70 200 -140 ma pulsed drain current i dm 500 -500 ma maximum power dissipation* t a =25 w t a =70 w operating junction and storage temperature range t j ,t stg maximum junction-to-ambient* r thja /w *surface mounted on fr4 board, t 10 sec. i d p d 625 0.2 0.13 -55 to 150 pin configuration
www.kexin.com.cn 2 smd type ic smd type transistors KI1501DL electrical characteristics t j =25 parameter symbol min typ max unit v gs =0v,i d =10 a n-ch 20 24 v gs =0v,i d =-10 a p-ch -20 -24 v ds =v gs ,i d =50 a n-ch 0.4 0.9 1.5 v ds =v gs ,i d =-50 a p-ch -0.4 -0.9 -1.5 n-ch 2 100 p-ch 2 100 v ds =20v,v gs = 0 v n-ch 0.001 100 v ds =-20v,v gs = 0 v p-ch -0.001 -100 v ds =20v,v gs =0v,t j =55 n-ch 1 v ds =-20v,v gs =0v,t j =55 p-ch -1 v ds 2.5 v, v gs =5.0v n-ch 120 v ds -2.5 v, v gs =-5.0v p-ch -120 v ds 4.5 v, v gs =8.0v n-ch 400 v ds -4.5 v, v gs =-8.0v p-ch -400 v gs =2.5v,i d = 150 ma n-ch 1.6 2.5 v gs =-2.5v,i d =-75ma p-ch 4 5 v gs =4.5v,i d = 250 ma n-ch 1.2 2.0 v gs =-4.5v,i d =-180ma p-ch 2.6 3.8 v ds =2.5v,i d =50ma n-ch 150 v ds =-2.5v,i d =-50ma p-ch 200 i s =50ma,v gs =0v n-ch 0.7 1.2 i s =-50ma,v gs =0v p-ch -0.7 -1.2 n-channel n-ch 300 450 v ds =5v,v gs =4.5v,i d = 100 ma p-ch 300 450 p-channel n-ch 25 v ds =-5v,v gs =-4.5v,i d =-ma*2 p-ch 25 n-ch 100 p-ch 100 n-channel n-ch 15 v ds =5v,v gs =0v p-ch 15 p-channel n-ch 11 v ds =-5v,v gs =0 v *2 p-ch 11 n-ch 5 p-ch 5 n channel n-ch 7 12 v dd =3v,r l = 100 p-ch 7 12 i d =0.25a,v gen =4.5v,r g =10 n-ch 25 35 p-ch 25 35 p-channel n-ch 19 30 v dd =-3v,r l = 100 p-ch 19 30 i d =-0.25a,v gen =-4.5v,r g =10 n-ch 9 15 p-ch 9 15 *1 guaranteed by design, not subject to production testing. *2 pulse test; pulse width 300 s, duty cycle 2%. fall time reverse transfer capacitance turn on time rise time turn off delay time gate source charge gate drain charge input capacitance output capacitance t r t d( off) t f gate threshold voltage gate body leakage zero gate voltage drain current on state drain currenta forward transconductance*1 diode forward voltage*1 total gate charge c iss c oss c rss t d(on) v sd q g q gs q gd i d(on) r ds(on) drainsourceonstateresistance*1 g fs drain source breakdown voltage v (br)dss v gs( th) i gss i dss v ds =0vv gs = 8v testconditons v na a pc pf ns ma ms v
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